Benjamin Tan, Martha Serna, Deji Akinwande
Transition metal dichalcogenide (TMD) materials such as MoS2 are an emerging class of materials with applications in photodiodes. However, traditional methods of enhancing photoluminescent (PL) properties involve chemical doping of films, which prevents achievement of homogeneous, large area films. Namely, the chemical etching present during the doping process leads inhomogeneity. We reveal incorporation of an adjacent, exposed lattice-matched substrate such as Al2O3 into the sulfurization of a pre-deposited Mo film in the presence of O2 as a method of growing MoS2 across large area with enhanced PL signal. This set-up allows Mo oxides ejected during the growth to redistribute back onto the exposed substrate.
Comments
Thank you so much for including the audio description — it helped me understand your work much better! —Rob Reichle